Keyword search on ‘photonics’
| Patent Title | Description | Patent Number |
|---|---|---|
| Si2Te3 Resistive Memory | The resistance switching behavior constitutes the principle for resistive random access memory which is considered as the next generation storage devices. This invention suggests to use an emerging 2D material Si2Te3 for fabricating resistive memory devices. The resistance switching inSi2Te3 it's achieved by applying a positive or negative voltage to switch the conductance between two states, i.e. high resistance and low resistance states. | 20200127198 |